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Probing the dust properties of galaxies up to submillimetre wavelengths I. The spectral energy distribution of dwarf galaxies using LABOCA

ven, 06/06/2014 - 15:53 webadm
M. Galametz, Madden, S., Galliano, F., Hony, S., Schuller, F., Beelen, A., Bendo, G., Sauvage, M., Lundgren, A., et Billot, N., Astronomy & Astrophysics, vol. 508. p. 645-664, 2009.

The molecular hydrogen explorer H2EX

ven, 06/06/2014 - 15:53 webadm
F. Boulanger, Maillard, J. P., Appleton, P., Falgarone, E., Lagache, G., Schulz, B., Wakker, B. P., Bressan, A., Cernicharo, J., Charmandaris, V., Drissen, L., Helou, G., Henning, T., Lim, T. L., Valentjin, E. A., Abergel, A., Le Bourlot, J., Bouzit, M., Cabrit, S., Combes, F., Deharveng, J. M., Desmet, P., Dole, H., Dumesnil, C., Dutrey, A., Fourmond, J. J., Gavila, E., Grange, R., Gry, C., Guillard, P., Guilloteau, S., Habart, E., Huet, B., Joblin, C., Langer, M., Longval, Y., Madden, S. C., Martin, C., Miville-Deschenes, M. A., G. Forêts, Pdes, Pointecouteau, E., Roussel, H., Tresse, L., Verstraete, L., Viallefond, F., Bertoldi, F., Jorgensen, J., Bouwman, J., Carmona, A., Krause, O., Baruffolo, A., Bonoli, C., Bortoletto, F., Danese, L., Granato, G. L., Pernechele, C., Rampazzo, R., Silva, L., De Zotti, G., Pardo, J., Spaans, M., van der Tak, F. F. S., Wild, W., Ferlet, M. J., Howat, S. K. Ramsay, Smith, M. D., Swinyard, B., Wright, G. S., Joncas, G., Martin, P. G., Davis, C. J., Draine, B. T., Goldsmith, P. F., Mainzer, A. K., Ogle, P., Rinehart, S. A., Stacey, G. J., et Tielens, A. G. G. M., Experimental Astronomy, vol. 23, nᵒ 1. p. 277 - 302, 2009.

Development of Superconducting NbSi TES Array and Associated Readout With SQUIDs and Integrated Circuit Operating at 2 K

ven, 06/06/2014 - 15:53 webadm
D. Prele, Piat, M. R., Breelle, E. L., Voisin, F., Pairat, M., Atik, Y., Bélier, B., Dumoulin, L., Evesque, C., Klisnick, G., Marnieros, S., Pajot, F., Redon, M., et Sou, G., Ieee Transactions on Applied Superconductivity, vol. 19. p. 501-504, 2009.

Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability

ven, 06/06/2014 - 15:53 webadm
X. Garros, Rochette, F., Andrieu, F., Baudot, S., Reimbold, G., Aulnette, C., Daval, N., et Boulanger, F., Journal of Applied Physics, vol. 105. 2009.

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